Moreover, the generality of the described phenomena for a wide variety of particles, from elementary particles to ions, is important, which in a sense makes the droplet model of demonstration almost universal. However, a large number of phenomena still remain unexplained, which means that not a few works should be done on the basis of available data and the drip model, as one of the most progressive analogies, will have to overcome quite a few tests on the way to achieving the goals set.
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TECHNICAL SCIENCES
DETERMINATION OF THE SURFACE RECOMBINATION RATE IN POLYCRYSTALLINE FILMS FROM THE CDTE-SIO>2—SI-AL COMPOUND BY THE MW-PC METHOD
UDC 544.22
Alimov Nodir Esonalievich
Doctor of Philosophy in Physical and Mathematical Sciences, Lecturer at the Department of Physics, Faculty of Physics and Technology, Ferghana State University
Ferghana State University, Ferghana, Uzbekistan
E-mail: alimov.nodir.esonaliyevich@gmail.com
Annotation. In this article, the rates of surface recombination in polycrystalline CdTe films obtained on oxidized substrates are studied, and the results of the action of corona discharge into the CdTe-SiO2—Si-Al structure are presented. In the static mode, a shift of the short-circuit current spectra to the short-wave region was observed. To analyze the displacement of the short-circuit current spectra, the microwave probe photoconductivity (MW-PC) method was used and contactless registration of transient decay processes for redundant carriers was performed. From the data obtained, it was found that the rate of surface recombination was estimated at 19 ns. It was determined that filling of surface traps in CdTe leads to a decrease in the effect of surface recombination.